SI4501BDY Datasheet, PDF (6/15 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET

Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
13.5
10.8
8.1
5.4
2.7
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
5.5
1.6
4.4
1.3
3.3
1.0
2.2
0.6
1.1
0.3
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11