SI4501BDY Datasheet, PDF (5/15 Pages) Vishay Siliconix – Complementary (N- and P-Channel) MOSFET

Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
10
0.04
T_J = 150 °C
1
T_J = 25 °C
0.03
I_D = 10 A
0.1
0.01
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
0.2
0
- 0.2
- 0.4
- 0.6
64
48
I_D = 5 mA
32
I_D = 250 μA
16
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
I_DM Limited
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 ^ID ^Limited
1 ms
1
10 ms
Limited by R_DS(on)*
0.1
T_C = 25 °C
Single Pulse
0.01
0.01
0.1
100 ms
1s
10 s
DC
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
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