VS-ST333C04CFL0 Datasheet, PDF (7/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST333C..C Series
Vishay Semiconductors
1E4
1E3
1E2
tp
1E1
1E1
20 jo ule s pe r p ulse
10
5
3
2
1
0.5
0 .3
0.2
ST33 3C ..C Se ries
Sinuso idal pulse
ST3 33 C Se ries
Rec tang ula r pulse
tp
di/dt = 50A /µs
2 0 jou les p er pulse
10
5
3
2
1
0 .5
0.4
0.3
0.2
1E2
1E3
P u lse B ase w id t h (µ s)
1 E14E 4
1E1
1E2
1E3
1E4
P u lse Ba se w id t h (µ s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1 00
Re c t a n g ula r g a t e p u lse
a ) R e c o m m e n d e d lo a d lin e fo r
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
b ) Re c o m m e n d e d lo a d lin e f o r
< = 30% ra te d d i/d t : 10 V , 10o hm s
1 0 _{tr<=1 µs}
(a)
(b)
(1) PGM = 10W, tp = 20m s
(2) PGM = 20W, tp = 10m s
(3) PGM = 40W, tp = 5m s
(4) PGM = 60W, tp = 3.3m s
1
0.1
0.0 01
VGD
IG D
0.0 1
(1) (2) (3 ) (4)
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0 .1
1
10
1 00
In sta n t a n e o u s G at e C u rr e n t (A )
Fig. 17 - Gate Characteristics
Revision: 20-Dec-13
7
Document Number: 93678
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