VS-ST333C04CFL0 Datasheet, PDF (5/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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1 00 0 0
9 5 00
9 0 00
8 5 00
8 0 00
At An y Rated L oad Con dition And W ith
Rated V _{RR M}Applied Following Surge.
In itial T_J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7 5 00
7 0 00
6 5 00
6 0 00
5500 _{ST333C..C Series}
5 0 00
4 5 00
1
10
100
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
12000
11000
10000
9000
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration. C ontrol
O f Con duction May Not Be M ain tained.
Initial T_J = 125°C
No Voltage Reapplied
Rated V _{RR M}Reapplied
8000
7000
6000
5000 ST333C..C Series
4000
0.01
0.1
1
Pulse T rain Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 0 00 0
10 0 0
T = 25°C
J
T = 125°C
J
ST333C..C Series
1 00
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Instan tan eous O n-state V oltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
VS-ST333C..C Series
Vishay Semiconductors
0 .1
S T3 3 3 C ..C Se r ie s
0 .0 1
0 .00 1
0 .0 01
S te a d y St a t e V a lu e
R _{th J-hs} = 0 .0 9 K /W
(S in gle Sid e C o o le d )
R _thJ-hs = 0.04 K /W
(D o u b le S id e C o o le d )
(D C O p e ra t io n )
0 .0 1
0.1
1
10
Sq u a re W a v e P u ls e D ur at io n (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
320
300
I_TM = 50 0 A
300 A
280
200 A
260
100 A
50 A
240
220
200
180
160
140
120
ST333C..C Series
T_J = 125 °C
100
80
10 20 30 40 50 60 70 80 90 100
Rate O f Fall O f O n-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
180
I_TM = 5 00 A
160
300 A
200 A
140
100 A
50 A
120
100
80
60
ST 333C ..C S eries
T_J = 1 2 5 ° C
40
20
10 20 30 40 50 60 70 80 90 100
R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 20-Dec-13
5
Document Number: 93678
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