VS-ST333C04CFL0 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST333C..C Series
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of off-state voltage
dV/dt
Maximum peak reverse and off-state leakage current
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum, linear to 80 % V_DRM,
higher value available on request
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES
500
UNITS
V/µs
50
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p ≤ 5 ms
T_J = 25 °C, V_A = 12 V, R_a = 6 Ω
T_J = T_J maximum, rated V_DRM applied
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to heatsink
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, case to heatsink
R_thC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.09
0.04
K/W
0.020
0.010
9800
N
(1000)
(kg)
83
g
TO-200AB (E-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.010
0.011
0.007
0.007
120°
0.012
0.012
0.012
0.013
90°
0.015
0.015
0.016
0.017
T_J = T_J maximum
K/W
60°
0.022
0.022
0.023
0.023
30°
0.036
0.036
0.036
0.037
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 20-Dec-13
3
Document Number: 93678
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