VS-ST333C04CFL0 Datasheet, PDF (6/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST333C..C Series
Vishay Semiconductors
1E4
1E3
1E2
1E1
1 000
1 50 0
25 00
3 00 0
50 00
500 ^{400 200 100 50 Hz}
Snubb er c ircu it
R _s = 10 ohms
C _s = 0 .47 µF
V _D = 80% V_DRM
ST33 3 C..C Serie s
Sin uso idal pulse
tp
T_C = 40°C
500 ^{400 200} 100 50 H z
1 000
15 0 0
2 50 0
3 00 0
Snubb er circ uit
R_s = 10 ohms
C _s = 0.4 7 µF
V _D = 80% V _DRM
5 00 0
ST33 3C ..C Serie s
Sinuso idal pulse
tp
T_C = 55°C
1E2
1E3
1E4
P ulse B a se w id th (µ s)
1E1
1E2
1E3
1E4
Pu lse B a sew id th (µ s)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
400 200 100 50 Hz
1000 ⁵⁰⁰
15 00
20 0 0
2 5 00
3 0 00
Snubber circuit
R_s = 10 ohms
C _s = 0.47 µF
V _D = 80% V_DRM
5 00 0
ST3 33 C.. C Se ries
Trap ezo id al p ulse
T_C = 4 0°C
tp
di/d t = 50 A/µs
Snubbe r circ uit
R _s = 10 ohms
C _s = 0.4 7 µF
V _D = 80% V DRM
1000 ^{500 400 200 100 50 Hz}
1 5 00
20 00
2 50 0
3 00 0
50 00
ST33 3C. .C Se ries
Trapezo idal p ulse
tp
T_C = 55°C
di/dt = 100A/µs
1E2
1E3
1E4
P u lse Ba se w id t h (µ s)
1E 1
1E2
1E3
1E4
P u lse Ba se w id th (µs)
Fig. 14 - Frequency Characteristics
1E4
1E3
1E2
1E1
100 0
15 00
20 00
2 50 0
3 00 0
50 00
500 ^{400 200 100 50 Hz}
Snubb er c ircuit
R _s = 10 ohms
C s = 0 .47 µ F
V D = 80% V_DRM
ST33 3 C..C Serie s
Trape zoidal pulse
tp
T_C = 40°C
d i/dt = 100 A/µs
1E2
1E3
1E4
P u lse B ase w id t h (µ s)
Snubbe r circ uit
R _s = 10 ohms
C _s = 0.4 7 µF
V _D = 80 % V _{DR M}
400 ^{200 100}
50 0
10 0 0
1 50 0
20 00
2 50 0
50 Hz
3 00 0
5 00 0
ST333 C.. C Se ries
Trapezo id al p ulse
tp
T_C = 55°C
di/dt = 100A/µs
1E1
1E 2
1E3
1E4
P u lse Ba se w id th (µ s)
Fig. 15 - Frequency Characteristics
Revision: 20-Dec-13
6
Document Number: 93678
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