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| VS-ST333C04CFL0 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors | |||
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www.vishay.com
VS-ST333C..C Series
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
1630
1420
1630
1390
1350
1090
720
550
50
VDRM
50
40
55
10/0.47
ITM
180° el
2520
2260
2670
2330
2440
2120
1450
1220
50
VDRM
-
40
55
10/0.47
ITM
100 µs
7610
6820
4080
3600
2420
2100
1230
1027
50
VDRM
-
40
55
10/0.47
UNITS
A
V
A/µs
°C
Ω/µF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ât for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I2ât
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
Double side (single side) cooled
720 (350) A
55 (75) °C
DC at 25 °C heatsink temperature double side cooled
1435
t = 10 ms
t = 8.3 ms
No voltage
reapplied
11 000
11 500
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
9250
9700
605
553
428
391
kA2s
t = 0.1 to 10 ms, no voltage reapplied
6050 kA2âs
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
(16.7 % x Ï x IT(AV) < I < Ï x IT(AV)), TJ = TJ maximum
0.91
V
(I > Ï x IT(AV)), TJ = TJ maximum
0.93
(16.7 % x Ï x IT(AV) < I < Ï x IT(AV)), TJ = TJ maximum
(I > Ï x IT(AV)), TJ = TJ maximum
0.58
mΩ
0.58
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
VALUES
MIN.
MAX
.
UNITS
1000
A/µs
1.1
µs
10 30
Revision: 20-Dec-13
2
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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