VS-ST303C Datasheet, PDF (7/10 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST303C Series
Vishay Semiconductors
10 000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
200
500
400
50 Hz
100
1000
100
10
1000
1500
2000
2500
3000
t_p
100
ST303C..C Series
Trapezoidal pulse
T_C = 40 °C
dI/dt = 100 A/µs
1000
10 000
10 000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
400
1000
500
1000
1500
2000
2500
t_p
3000
100
10
100
50 Hz
200 ¹⁰⁰
ST303C..C Series
Trapezoidal pulse
T_C = 55 °C
dI/dt = 100 A/µs
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
1000
100
10
10
20 joules per pulse
10
3
5
2
1
0.5
0.4
ST303C..C Series
Sinusoidal pulse
t_p
100
1000
10 000
100 000
10 000
ST303C..C Series
Rectangular pulse
t_{p dI/dt = 50 A/µs}
20 joules per pulse
1000
100
10
10
2
1
0.5
0.4
100
3 ^{10 5}
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t_r ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
(a)
t_r ≤ 1 µs
(b)
(1) P_GM = 10 W, t_p = 20 ms
(2) P_GM = 20 W, t_p = 10 ms
(3) P_GM = 40 W, t_p = 5 ms
(4) P_GM = 60 W, t_p = 3.3 ms
1
0.1
0.001
V_GD
I_GD
(1) (2) (3) (4)
Device: ST303C..C Series
Frequency limited by P_G(AV)
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Revision: 20-Dec-13
7
Document Number: 94373
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