VS-ST303C Datasheet, PDF (4/10 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST303C Series
Vishay Semiconductors
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.010
0.010
0.007
0.007
120°
0.012
0.012
0.012
0.013
90°
0.015
0.015
0.016
0.017
T_J = T_J max.
K/W
60°
0.022
0.022
0.023
0.023
30°
0.036
0.036
0.036
0.037
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
130
ST303C..C Series
120
(Single side cooled)
110
R_thJ-hs (DC) = 0.09 K/W
100
90
Ø
Conduction angle
80
70
60
180°
50
40
0
30° 60° 90°
120°
50 100 150 200 250 300 350 400
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST303C..C Series
(Double side cooled)
R_thJ-hs (DC) = 0.04 K/W
Ø
Conduction angle
180°
30° ^60° 90° 120°
100 200 300 400 500 600 700 800
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST303C..C Series
(Single side cooled)
R_thJ-hs (DC) = 0.09 K/W
Ø
Conduction period
60°
30°
90°
180°
DC
120°
100 200 300 400 500 600 700
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST303C..C Series
(Double side cooled)
R_thJ-hs (DC) = 0.04 K/W
Ø
Conduction period
DC
180°
30° ^{60° 90°} _120°
200 400 600 800 1000 1200
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
Revision: 20-Dec-13
4
Document Number: 94373
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