VS-ST303C Datasheet, PDF (6/10 Pages) Vishay Siliconix – Center amplifying gate

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320
300
I_TM = 500 A
I_TM = 300 A
280
I_TM = 200 A
260
I_TM = 100 A
240
I_TM = 50 A
220
200
180
160
140
120
ST303C..C Series
100
T_J = 125 °C
80
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
VS-ST303C Series
Vishay Semiconductors
180
I_TM = 500 A
160
I_TM = 300 A
I_TM = 200 A
140
I_TM = 100 A
I_TM = 50 A
120
100
80
ST303C..C Series
60
T_J = 125 °C
40
20
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
10 000
1000
100
10
10 000
400 200
50 Hz
100
500
1000
1500
2000
2500
3000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
ST303C..C Series
Sinusoidal pulse
t_p
T_C = 40 °C
100
1000
10 000
1000
100
10
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
200
400 ₅₀₀
50 Hz
100
1000
1500
2000
2500
3000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
ST303C..C Series
Sinusoidal pulse
t_p
T_C = 55 °C
100
1000
Pulse Basewidth (µs)
10 000
10 000
1000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
200
50 Hz
500
100
400
1000
1500
100
10
2000
2500
3000
t_p
100
ST303C..C Series
Trapezoidal pulse
T_C = 40 °C
dI/dt = 50 A/µs
1000
10 000
10 000
1000
Snubber circuit
R_s = 10 Ω
C_s = 0.47 µF
V_D = 80 % V_DRM
200
50 Hz
500
1000
100
400
1500
2500
2000
100
10
3000
100
ST303C..C Series
Trapezoidal pulse
t_p
T_C = 55 °C
dI/dt = 50 A/µs
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
Revision: 20-Dec-13
6
Document Number: 94373
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