VS-ST303C Datasheet, PDF (5/10 Pages) Vishay Siliconix – Center amplifying gate

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2000
1800
1600
1400
1200
1000
180°
120°
90°
60°
30°
RMS limit
800
600
400
200
0
0
Ø
Conduction angle
ST303C..C Series
T_J = 125 °C
100 200 300 400 500 600 700 800
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
2800
2400
2000
1600
1200
DC
180°
120°
90°
60°
30°
RMS limit
800
Ø
Conduction period
400
0
0
ST303C..C Series
T_J = 125 °C
200 400 600 800 1000 1200
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
VS-ST303C Series
Vishay Semiconductors
8000
7500
7000
6500
6000
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial T_J = 125 °C
No voltage reapplied
Rated V_RRM reapplied
5500
5000
4500
4000
3500 _{ST303C..C Series}
3000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
1000
T_J = 25 °C
T_J = 125 °C
ST303C..C Series
100
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Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
7500
7000
6500
6000
At any rated load condition and with
rated V_RRM applied following surge
Initial T_J = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
5500
5000
4500
4000
3500
ST303C..C Series
3000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1
ST303C..C Series
0.1
0.01
0.001
0.001
0.01
Steady state value
R_thJ-hs = 0.09 K/W
(Single side cooled)
R_thJ-hs = 0.04 K/W
(Double side cooled)
(DC operation)
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
Revision: 20-Dec-13
5
Document Number: 94373
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