VS-GB75DA120UP Datasheet, PDF (7/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

Not Available for New Designs, Use VS-GB90DA120U
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VS-GB75DA120UP
Vishay Semiconductors
1
2
3
V_C
90 %
10 %
90 %
t_d(off)
10 %
5%
I_C
t_d(on)
t_r
t_f
E_on
E_off
E_ts = (E_on + E_off)
Fig. 18b - Switching Loss Waveforms Test Circuit
t = 5 µs
ORDERING INFORMATION TABLE
Device code _{VS- G B 75 D A 120 U P}
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - B = IGBT Generation 5
4 - Current rating (75 = 75 A)
5 - Circuit configuration (D = Single switch with antiparallel diode)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = Ultrafast IGBT)
9 - Totally lead (Pb)-free
CIRCUIT CONFIGURATION
3 (C)
2 (G)
Dimensions
Packaging information
1, 4 (E)
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Revision: 30-Jul-13
7
Document Number: 93011
For technical questions within your region: [e-mail], [e-mail], [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000