VS-GB75DA120UP Datasheet, PDF (3/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

Not Available for New Designs, Use VS-GB90DA120U
www.vishay.com
VS-GB75DA120UP
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Case style
MIN.
- 40
-
-
-
-
-
SOT-227
TYP.
-
-
-
0.05
30
-
MAX.
150
0.19
0.52
-
-
1.3
UNITS
°C
°C/W
g
Nm
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
1
10
100
1000
10 000
V_CE (V)
Fig. 2 - IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V
200
150
T_J = 25 °C
100
T_J = 125 °C
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70
I_F - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Revision: 30-Jul-13
3
Document Number: 93011
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000