VS-GB75DA120UP Datasheet, PDF (5/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

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VS-GB75DA120UP
Vishay Semiconductors
14
12
E_on
10
8
E_off
6
4
2
0
0
10
20
30
40
50
10 000
R_G (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, I_C = 75 A, L = 500 μH,
V_CC = 600 V, V_GE = 15 V
1000
100
t_d(on)
t_d(off)
t_f
t_r
10
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
1
250
230
210
190
170
150
130
110
90
70
100
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 13 - Typical t_rr diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
40
35
30
T_J = 125 °C
25
20
15
T_J = 25 °C
10
5
0
100
dI_F/dt (A/µs)
Fig. 14 - Typical I_rr diode vs. dI_F/dt
V_RR = 200 V, I_F = 50 A
1000
0.1
0.01
0.001
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (t₁)
Fig. 15 - Maximum Thermal Impedance Z_thJC Characteristics (IGBT)
Revision: 30-Jul-13
5
Document Number: 93011
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