VS-GB75DA120UP Datasheet, PDF (4/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

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VS-GB75DA120UP
Vishay Semiconductors
200
4.5
150
100
50
T_J = 125 °C
T_J = 25 °C
0
0
1
2
3
4
5
V_FM (V)
Fig. 5 - Typical Diode Forward Characteristics
10
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0
200 400 600 800 1000 1200
V_CES (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
6.0
5.5
T_J = 25 °C
5.0
4.5
T_J = 125 °C
4.0
3.5
3.0
0.0002
0.0004
0.0006
0.0008
0.001
I_C (mA)
Fig. 7 - Typical IGBT Threshold Voltage
4.0
100 A
75 A
3.5
3.0
2.5
27 A
2.0
25
50
75
100
125
150
T_J (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V_GE = 15 V
4.0
3.5
3.0
2.5
E_off
2.0
1.5
E_on
1.0
0.5
0
10 20 30 40 50 60 70 80
1000
I_C (A)
Fig. 9 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
100
t_d(off)
t_d(on)
t_f
t_r
10
0
20
40
60
80
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
Revision: 30-Jul-13
4
Document Number: 93011
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