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| VS-GB75DA120UP Datasheet, PDF (2/9 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A | |||
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Not Available for New Designs, Use VS-GB90DA120U
www.vishay.com
VS-GB75DA120UP
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 250 μA
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient ofï
threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
VGE(th)/ïTJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
Forward voltage drop
IC = 75 A, VGE = 0 V
VFM
IC = 75 A, VGE = 0 V, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
4
-
-
-
-
-
-
TYP.
-
3.3
3.6
5
- 12
3
4
3.4
3.3
-
MAX.
-
3.8
3.9
6
-
250
20
5.0
5.2
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 ïï¬
L = 500 μH, TJ = 25 °C
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 ïï¬ ï
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
td(off)
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
TJ = 150 °C, IC = 200 A, Rg = 22 ïï¬ï
VGE = 15 V to 0 V, VCC = 900 V,ï
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, ï
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
690
65
250
1.53
1.76
3.29
2.49
3.45
5.94
281
45
300
126
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
142
210
-
13
16
-
923
1680
-
202
260
-
18
22
-
1818
2860
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 30-Jul-13
2
Document Number: 93011
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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