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VS-GB55NA120UX Datasheet, PDF (7/9 Pages) Vishay Siliconix – NPT Generation V IGBT technology
www.vishay.com
ORDERING INFORMATION TABLE
VS-GB55NA120UX
Vishay Semiconductors
Device code VS- G B 55 N A 120 U X
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - Insulated Gate Bipolar Transistor (IGBT)
3 - B = IGBT Generation 5
4 - Current rating (55 = 50 A)
5 - Circuit configuration (N = high side chopper)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = ultrafast IGBT)
9 - Diode (X = HEXFRED® diode)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
4
CIRCUIT DRAWING
Lead Assignment
4
3
3
High side chopper IGBT
N
1
Dimensions
Packaging information
1
2
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Revision: 17-Oct-16
7
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000