VS-GB55NA120UX Datasheet, PDF (5/9 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB55NA120UX
Vishay Semiconductors
8
7
6
5
4
E_on
3
2
E_off
1
0
0
10
20
30
40
50
R_g (Ω)
Fig. 11 - Typical IGBT Energy Losses vs. R_g
T_J = 125 °C, I_C = 50 A, V_CC = 600 V, V_GE = 15 V, L = 500 μH
1000
100
t_d(off)
t_d(on)
t_f
t_r
10
0
10
20
30
40
50
R_g (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, I_C = 50 A, V_CC = 600 V, V_GE = 15 V, L = 500 μH
270
250
230
210
190
T_J = 125 °C
170
150
130
110
T_J = 25 °C
90
70
100
1000
dI_F/dt (A/μs)
Fig. 13 - Typical t_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
40
35
30
25
T_J = 125 °C
20
15
T_J = 25 °C
10
5
0
100
1000
dI_F/dt (A/μs)
Fig. 14 - Typical I_rr Diode vs. dI_F/dt
V_R = 200 V, I_F = 50 A
2650
2400
2150
1900
T_J = 125 °C
1650
1400
1150
900
T_J = 25 °C
650
400
100
1000
dI_F/dt (A/μs)
Fig. 15 - Typical Q_rr Diode vs. dI_F/dt,
V_R = 200 V, I_F = 50 A
Revision: 17-Oct-16
5
Document Number: 95855
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