VS-GB55NA120UX Datasheet, PDF (4/9 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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7.5
6.5
T_J = 25 °C
5.5
4.5
3.5
T_J = 125 °C
2.5
1.5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I_C (mA)
Fig. 5 - Typical IGBT Threshold Voltage
VS-GB55NA120UX
Vishay Semiconductors
200
175
150
125
100
T_J = 125 °C
T_J = 25 °C
75
50
25
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V_FM (V)
Fig. 8 - Typical Diode Forward Characteristics
6
4.0
5
100 A
4
50 A
3
25 A
3.0
E_on
2.0
E_off
1.0
2
10 30 50 70 90 110 130 150
T_J (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V_GE = 15 V
160
140
120
100
80
DC
60
40
20
0
0
20
40
60
80
100
I_F - Continuous Forward Current (A)
Fig. 7 - Maximum Diode Continuous Forward Current vs.
Case Temperature
0
10
20
30
40
50
I_C (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, V_CC = 600 V, V_GE = 15 V, L = 500 μH, R_g = 4.7 
1
0.1
t_d(on)
t_d(off)
t_f
t_r
0.01
10
20
30
40
50
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, V_CC = 600 V, V_GE = 15 V, L = 500 μH, R_g = 4.7 
Revision: 17-Oct-16
4
Document Number: 95855
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