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| VS-GB55NA120UX Datasheet, PDF (2/9 Pages) Vishay Siliconix – NPT Generation V IGBT technology | |||
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VS-GB55NA120UX
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient ofï
threshold voltage
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/ïTJ
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 125 °C
VGE = 15 V, IC = 50 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
Diode reverse breakdown voltage
Diode forward voltage drop
Diode reverse leakage current
Gate to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VBR
IR = 1 mA
IF = 25 A, VGE = 0 V
VFM
IF = 50 A, VGE = 0 V
IF = 25 A, VGE = 0 V, TJ = 125 °C
IF = 50 A, VGE = 0 V, TJ = 125 °C
IRM
VR = 1200 V
TJ = 125 °C, VR = 1200 V
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
2.5
3.3
3.0
4.03
5.5
-12.9
8
0.15
-
2.11
2.72
2.04
2.83
4
0.8
-
MAX.
-
2.8
-
-
-
7.1
-
50
-
-
2.42
-
-
-
50
-
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 4.7 ïï¬ï
L = 500 μH, TJ = 25 °C
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 4.7 ïï¬ ï
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
TJ = 150 °C, IC = 150 A, Rg = 22 ïï¬ï
VGE = 15 V to 0 V, VCC = 900 V,ï
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, ï
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
1.87
0.83
2.7
3.43
1.29
4.72
147
35
186
119
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
129
-
-
11
-
-
710
-
-
208
-
-
17
-
-
1768
-
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 17-Oct-16
2
Document Number: 95855
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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