VS-GB55NA120UX Datasheet, PDF (1/9 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB55NA120UX
Vishay Semiconductors
“High Side Chopper” IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 50 A, 25 °C
Package
Circuit
1200 V
50 A at 92 °C
3.3 V
SOT-227
High side switch
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED^® clamping diode
• Positive V_CE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
I_CM
Clamped inductive load current
I_LM
Diode continuous forward current
I_F
Single pulse forward current
I_FSM
Gate to emitter voltage
V_GE
Power dissipation, IGBT
P_D
Power dissipation, diode
RMS isolation voltage
P_D
V_ISOL
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
87
59
310
± 20
431
242
338
190
2500
UNITS
V
A
V
W
V
Revision: 17-Oct-16
1
Document Number: 95855
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000