SUD50N04-06P Datasheet, PDF (7/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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SUD50N04-06P
Vishay Siliconix
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
10^-3
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 45 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.1
0.05 Single Pulse
0.02
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74443.
Document Number: 74443
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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