SUD50N04-06P Datasheet, PDF (6/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 °C MOSFET

SUD50N04-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
100
3.2
80
2.4
60
1.6
40
0.8
20
0.0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Power Derating*, Junction-to-Ambient
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Power Derating*, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 74443
S-81956-Rev. B, 25-Aug-08