SUD50N04-06P Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 °C MOSFET

SUD50N04-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.1
I_D = 30 A
8
1.8
V_DS = 20 V
6
1.5
V_DS = 10 V
V_DS = 30 V
4
1.2
I_D = 15 A
V_GS = 4.5 V
V_GS = 10 V
2
0
0
100
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
400
0.9
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.5
I_D = 5 mA
0.2
- 0.1 ^{ID = 250 µA}
- 0.4
- 0.7
- 1.0
- 1.3
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
400
320
320
240
240
160
160
80
80
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 74443
S-81956-Rev. B, 25-Aug-08