SUD50N04-06P Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
2.0
V_GS = 10 thru 4 V
3V
64
1.6
SUD50N04-06P
Vishay Siliconix
48
1.2
T_C = 125 °C
32
0.8
16
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
200
0.4
T_C = 25 °C
T_C = - 55 °C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.008
160
T_C = - 55 °C
120
T_C = 25 °C
80
T_C = 125 °C
40
0.007
0.006
0.005
V_GS = 4.5 V
V_GS = 10 V
0
0
0.05
0.04
0.03
8
16
24
32
40
I_D - Drain Current (A)
Transconductance
I_D = 15 A
0.004
0
7500
12
24
36
48
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6000
C_iss
4500
0.02
125 °C
0.01
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74443
S-81956-Rev. B, 25-Aug-08
3000
1500
C_rss
0
0
8
C_oss
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
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