SUD50N04-06P Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 °C MOSFET

SUD50N04-06P
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
40
0.0065 at V_GS = 10 V
0.008 at V_GS = 4.5 V
I_D (A)^a
20
20
Q_g (Typ.)
53.6 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• LCD TV Inverter
• Secondary Synchronous Rectification
RoHS
COMPLIANT
TO-252
D
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD50N04-06P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 16
T_C = 25 °C
20^c
Continuous Drain Current (T_J = 150 °C)
T_C = 100 °C
T_A = 25 °C
I_D
20^c
15.9^b
Pulsed Drain Current
T_A = 100 °C
11^b
A
I_DM
60
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
20^c
2.5^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
T_C = 25 °C
79
Maximum Power Dissipation
T_C = 100 °C
T_A = 25 °C
P_D
39.5
3.3^b
W
T_A = 100 °C
1.6^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Package limited.
Document Number: 74443
S-81956-Rev. B, 25-Aug-08
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
37
1.5
Maximum
4.5
1.9
Unit
°C/W
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