SIA850DJ Datasheet, PDF (7/9 Pages) Vishay Siliconix – N-Channel 190-V (D-S) MOSFET with 190-V Diode

New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
1.2
8
SiA850DJ
Vishay Siliconix
0.9
6
0.6
4
0.3
2
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68909
S09-0137-Rev. B, 02-Feb-09
www.vishay.com
7