SIA850DJ Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel 190-V (D-S) MOSFET with 190-V Diode

SiA850DJ
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
1
8
I_D = 0.36 A
7
6
T_J = 150 °C
0.1
T_J = 25 °C
5
4
3
T_J = 125 °C
T_J = 25 °C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
10
Limited by R_DS(on)*
1
100 µs
0.1
1 ms
10 ms
0.01
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
6
Document Number: 68909
S09-0137-Rev. B, 02-Feb-09