SIA850DJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 190-V (D-S) MOSFET with 190-V Diode

New Product
SiA850DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
1.0
0.9
V_GS = 5 V thru 2 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V_GS = 1 V
0.0
0 1 2 3 4 5 6 7 8 9 10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0.4
T_C = - 55 °C
0.3
0.2
T_C = 25 °C
0.1
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6
150
5
V_GS = 1.8 V
4
V_GS = 2.5 V
3
V_GS = 4.5 V
2
0.0
0.2
0.4
0.6
0.8
1.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 0.47 A
8
V_DS = 95 V
6
V_DS = 152 V
4
2
120
C_iss
90
60
30
C_oss
0 ^Crss
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.4
2.0
V_GS = 4.5 V; 2.5 V; I_D = 0.36 A
1.6
1.2
V_GS = 1.8 V; I_D = 0.15 A
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68909
S09-0137-Rev. B, 02-Feb-09
www.vishay.com
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