SIA850DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 190-V (D-S) MOSFET with 190-V Diode

SiA850DJ
Vishay Siliconix
New Product
DIODE TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10^-6
1
10^-7
V_R = 190 V
10^-8
T_J = 150 °C
0.1
T_J = 25 °C
10^-9
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Reverse Current vs. Junction Temperature
1
Duty Cycle = 0.5
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_F - Forward Voltage (V)
Forward Diode Voltage
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^-4
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 85 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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4
Document Number: 68909
S09-0137-Rev. B, 02-Feb-09