SIA850DJ Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 190-V (D-S) MOSFET with 190-V Diode

New Product
SiA850DJ
Vishay Siliconix
N-Channel 190-V (D-S) MOSFET with 190-V Diode
PRODUCT SUMMARY
V_DS (V)
190
R_DS(on) (Ω)
3.8 at V_GS = 4.5 V
4.2 at V_GS = 2.5 V
17 at V_GS = 1.8 V
I_D (A)^a
0.95
0.9
0.3
DIODE PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
190
1.2 at 0.5 A
Q_g (Typ.)
1.4 nC
I_F (A)^a
0.95
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT^® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK^®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch for Portable Devices
D
K
1
A
2
NC
Marking Code
K
3
D
Part # code
CDX
G
K
0.75 mm
XXX
6
D
Lot Traceability
G
and Date code
5
2.05 mm S
2.05 mm
S
4
A
Ordering Information: SiA850DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
190
Reverse Voltage (Diode)
V_KA
190
V
Gate-Source Voltage (MOSFET)
V_GS
± 16
T_C = 25 °C
0.95
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
0.76
0.47^{b, c}
T_A = 70 °C
0.38^{b, c}
Pulsed Drain Current (MOSFET)
I_DM
1
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Diode)
T_C = 25 °C
T_A = 25 °C
I_S
I_F
0.95
0.47^{b, c}
0.95
Pulsed Forward Current (Diode)
I_FM
2
T_C = 25 °C
7
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
5
1.9^{b, c}
T_A = 70 °C
T_C = 25 °C
P_D
1.2^{b, c}
7.8
W
Maximum Power Dissipation (Diode)
T_C = 70 °C
T_A = 25 °C
5
1.9^{b, c}
T_A = 70 °C
1.2^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
260
°C
Document Number: 68909
S09-0137-Rev. B, 02-Feb-09
www.vishay.com
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