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SI8800EDB Datasheet, PDF (7/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height
New Product
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
4xØb
Si8800EDB
Vishay Siliconix
800
XXX
Mark on Backside of die
4 x Ø 0.205 to 0.225 Note 4
Solder Mask ~ Ø 0.215
S
S
D
G
s
e
D
2
3
1
4
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø 0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
·5. is location of pin 1.
Dim.
Min.
Millimetersa
Nom.
A
0.314
0.357
A1
0.127
0.157
A2
0.187
0.200
b
0.165
0.175
e
0.400
s
0.180
0.200
D
0.760
0.800
Notes:
a. Use millimeters as the primary measurement.
Max.
0.400
0.187
0.213
0.185
0.220
0.840
Min.
0.0124
0.0050
0.0074
0.0064
0.0070
0.0299
Inches
Nom.
0.0141
0.0062
0.0079
0.0068
0.0157
0.0078
0.0314
Max.
0.0157
0.0074
0.0084
0.0072
0.0086
0.0330
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66700.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
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