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SI8800EDB Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height | |||
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New Product
N-Channel 20 V (D-S) MOSFET
Si8800EDB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.080 at VGS = 4.5 V
0.090 at VGS = 2.5 V
0.105 at VGS = 1.8 V
0.150 at VGS = 1.5 V
ID (A)a
2.8
2.6
2.4
2.0
Qg (Typ.)
3.2 nC
MICRO FOOT
Bump Side View
Backside View
S
G
2
1
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠Ultra Small 0.8 mm x 0.8 mm Outline
⢠Ultra Thin 0.357 mm Height
⢠Typical ESD Protection 1500 V
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Portable Devices such as Cell Phones,
Smart Phones and MP3 Players
- Load Switch
- Small Signal Switch
R
G
S
D
3
4
Device Marking: 800
xxx = Date/Lot Traceability Code
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
±8
2.8a
2.2a
2.0b
1.6b
15
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
D
S
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
tâ¤5s
Symbol
RthJA
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
Typical
105
200
Maximum
135
260
Unit
°C/W
www.vishay.com
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