SI8800EDB Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
10-1
Si8800EDB
Vishay Siliconix
1.2
10^-3
T_J = 25 °C
0.9
10^-5
T_J = 150 °C
T_J = 25 °C
0.6
10-7
0.3
10^-9
0.0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
V_GS = 5 V thru 2 V
12
10-11
0
5
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
4
9
V_GS = 1.5 V
6
3
0
0.0
0.15
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.12
0.09
0.06
0.03
V_GS = 1.5 V
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
3
2
T_C = 25 °C
1
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8
I_D = 1 A
6
V_DS = 5 V
V_DS = 10 V
4
V_DS = 16 V
2
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
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