SI8800EDB Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height

New Product
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
10
V_GS = 4.5 V, V _GS = 2.5 V, V_GS = 1.8 V; I_D = 1 A
1.4
1.3
T_J = 150 °C
1.2
T_J = 25 °C
1.1
1
V_GS = 1.5 V; I_D = 0.5 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.14
0.8
0.7
0.12
I_D = 1.5 A; T_J = 125 °C
0.6
0.10
0.5
0.08
I_D = 0.5 A; T_J = 125 °C
I_D = 1.5 A; T_J = 25 °C
0.4
0.06
I_D = 0.5 A; T_J = 25 °C
0.3
I_D = 250 μA
0.04
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
14
12
10
8
6
4
2
0
0.001 0.01 0.1
1
10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
4
Document Number: 66700
S10-1046-Rev. A, 03-May-10