SI8800EDB Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET Ultra Thin 0.357 mm Height

Si8800EDB
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS , I_D = 250 µA
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 1.0 A
V_GS = 2.5 V, I_D = 1.0 A
V_GS = 1.8 V, I_D = 1.0 A
V_GS = 1.5 V, I_D = 0.5 A
V_DS = 10 V, I_D = 1.0 A
Total Gate Charge
Q_g
V_DS = 10 V, V_GS = 8 V, I_D = 1.0 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 1.0 A
f = 1 MHz
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1.0 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1.0 A, V_GEN = 8 V, R_g = 1 Ω
T_C = 25 °C
I_S = 1.0 A, V_GS = 0 V
I_F = 1.0 A, dI/dt = 100 A/µs, T_J = 25 °C
Min.
20
0.4
10
Typ. Max. Unit
18
- 2.3
0.066
0.072
0.082
0.095
10
1.0
± 0.5
±6
1
10
0.080
0.090
0.105
0.150
V
mV/°C
V
µA
A
Ω
S
5.5
8.3
3.2
5.0
nC
0.42
0.5
1.0
kΩ
65
130
85
170
900 1800
350
700
ns
25
50
40
80
1100 2200
350
700
0.7
A
15
1.0
1.5
V
13
25
ns
5
10
nC
8
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66700
S10-1046-Rev. A, 03-May-10