SI5855CDC Datasheet, PDF (7/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si5855CDC
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 110 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
10
1
0.1
20 V
10 V
0.01
T_J = 150 °C
1
0.001
1
T_J = 25 °C
0.0001
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
Document Number: 68910
S-82299-Rev. A, 22-Sep-08
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
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