SI5855CDC Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.7
5
Si5855CDC
Vishay Siliconix
0.6
4
I_D = 250 µA
0.5
3
0.4
2
0.3
1
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
Limited by R_DS(on)*
10
100 µs
1
1 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68910
S-82299-Rev. A, 22-Sep-08
www.vishay.com
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