SI5855CDC Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5855CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
540
0.25
0.20
0.15
V_GS = - 1.8 V
V_GS = - 2.5 V
450
360
C_iss
270
0.10
0.05
V_GS = - 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On Resistance vs. Drain Current
5
I_D = 2.5 A
4
V_DS = 10 V
3
V_DS = 16 V
2
1
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
Gate Charge
100
10
180
C_oss
90
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.3
V_GS = 4.5 V; I_D = 2.5 A
1.1
0.9
V_GS = 2.5 V; I_D = 2.2 A
0.7
- 50 - 25 0 25 50
75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
I_D = 2.5 A
0.20
T_J = 125 °C
0.15
T_J = 150 °C
T_J = 25 °C
1
0.10
0.05
T_J = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp.
www.vishay.com
4
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 68910
S-82299-Rev. A, 22-Sep-08