SI5855CDC Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si5855CDC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.144 at V_GS = - 4.5 V
0.180 at V_GS = - 2.5 V
0.222 at V_GS = - 1.8 V
I_D (A)^a
- 3.7
- 3.3
- 3.0
Q_g (Typ.)
4.1 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.375 at 1 A
I_F (A)^a
1
1206-8 ChipFET^®
1
A
K
A
K
D
D
S
G
Bottom View
Marking Code
JG XXX
Lot Traceability
and Date Code
Part #
Code
Ordering Information: Si5855CDC-T1-E3 (Lead (Pb)-free)
FEATURES
• LITTLE FOOT^® Plus Power MOSFET
• Ultra Low V_F Schottky
APPLICATIONS
RoHS
COMPLIANT
• Charging Switch for Portable Devices
- With Integrated Low V_F Trench Schottky Diode
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
- 20
Reverse Voltage (Schottky)
V_KA
20
V
Gate-Source Voltage (MOSFET)
V_GS
±8
T_C = 25 °C
- 3.7^a
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
- 3.0
- 2.5^{b, c}
T_A = 70 °C
- 2.0^{b, c}
Pulsed Drain Current (MOSFET)
I_DM
- 10
A
Continuous Source Current (MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
- 2.3^a
- 1.1^{b, c}
Average Forward Current (Schottky)
I_F
1
Pulsed Forward Current (Schottky)
I_FM
7
T_C = 25 °C
2.8
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
1.8
1.3^{b, c}
W
T_A = 70 °C
T_C = 25 °C
P_D
0.8^{b, c}
3.1
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
2.0
W
1.9
T_A = 70 °C
1.2
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 68910
S-82299-Rev. A, 22-Sep-08
www.vishay.com
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