SI4829DY Datasheet, PDF (7/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
0.5
I_D = 2.5 A
0.4
T_J = 25 °C
T_J = 150 °C
0.3
1
0.2
0.1
Si4829DY
Vishay Siliconix
T_J = 125 °C
T_J = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.1
1.0
0.9
I_D = 250 µA
0.8
0.7
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by R_DS(on)*
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
16
12
8
Single Pulse Power
4
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
100 µs
1
I_D(on) Limited
0.1
T_A = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
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