SI4829DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4829DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 20
0.215 at V_GS = - 4.5 V
0.320 at V_GS = - 2.5 V
I_D (A)^a
-2
-2
Q_g (Typ.)
2.6 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
30
0.44 at 1 A
I_F (A)^a
2
A1
A2
S3
G4
SO-8
8^K
7K
6D
5D
Top View
Ordering Information: Si4829DY-T1-E3 (Lead (Pb)-free)
Si4829DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Schottky
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Buck Converter
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
- 20
Reverse Voltage (Schottky)
V_KA
30
V
Gate-Source Voltage (MOSFET)
V_GS
± 12
T_C = 25 °C
- 2^a
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
- 2^a
- 2^{a, b, c}
Pulsed Drain Current (MOSFET)
T_A = 70 °C
I_DM
- 2^{a, b, c}
-7
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
T_C = 25 °C
T_A = 25 °C
I_S
I_F
- 2.2
- 1.4^{b, c}
2^b
T_C = 25 °C
3.1
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
2
2^{b, c}
T_A = 70 °C
T_C = 25 °C
P_D
1.3^{b, c}
2.3
W
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
1.5
1.7^{b, c}
T_A = 70 °C
1.1^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
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