SI4829DY Datasheet, PDF (6/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4829DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
7
4
V_GS = 5 V thru 3.5 V
V_GS = 3 V
6
3
5
V_GS = 2.5 V
4
2
3
2
V_GS = 2 V
1
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = 25 °C
1
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.5
350
0.4
V_GS = 2.5 V
0.3
0.2
V_GS = 4.5 V
0.1
0.0
0
1
2
3
4
5
6
7
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 2.5 A
8
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
280
C_iss
210
140
70
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.4
V_GS = 4.5 V, I_D = 2.5 A
1.3
1.2
1.1
V_GS = 2.5 V, I_D = 0.3 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09