SI4829DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4829DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
10
10
1
10-1
10-2
10-3
10-4
V_R = 30 V
V_R = 20 V
T_J = 150 °C
T_J = 25 °C
1
10-5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
500
0.1
0.0
0.2
0.4
0.6
0.8
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
400
300
200
100
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
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4
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09