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SI4829DY Datasheet, PDF (2/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode
Si4829DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, g
Maximum Junction-to-Foot (Drain) (Schottky)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
RthJA
RthJF
Typical
55
30
57
42
Maximum
62.5
40
75
55
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 10 V
VGS = - 4.5 V, ID = - 2.5 A
VGS = - 2.5 V, ID = - 1.0 A
VDS = - 10 V, ID = - 2.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 2.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A
f = 1 MHz
VDD = - 10 V, RL = 5 Ω
ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 5 Ω
ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω
Min.
- 20
- 0.6
-7
Typ.
- 19
3
0.175
0.260
5
210
55
40
5.2
2.6
0.53
0.9
7
20
45
15
10
5
12
15
10
Max.
- 1.5
± 100
-1
- 10
0.215
0.320
8
4
14
30
70
25
15
10
20
25
15
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
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Document Number: 68760
S09-2109-Rev. B, 12-Oct-09