SI4726CY Datasheet, PDF (7/9 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make

Si4726CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Input Current vs. Junction Temperature
350
10
Source-Drain Diode Forward Voltage
300
I_DDQ @ IN = H
250
200
I_DDQ @ IN = L
150
T_J = 150_C
T_J = 25_C
100
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Single Pulse Power, Junction-to-Foot (Q₁)
50
40
30
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V_SD - Source-to-Drain Voltage (V)
Single Pulse Power, Junction-to-Ambient (Q₁)
50
40
30
20
20
10
10
0
0.01
0.1
1
10
Time (sec)
100
1000
Single Pulse Power, Junction-to-Foot (Q₂)
50
40
30
0
0.01
0.1
1
10
Time (sec)
100
1000
Single Pulse Power, Junction-to-Ambient (Q₂)
50
40
30
20
20
10
10
0
0.01
0.1
1
10
Time (sec)
Document Number: 71285
S-03075—Rev. C, 03-Feb-03
100
1000
0
0.01
0.1
1
10
Time (sec)
100
1000
www.vishay.com
7