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SI4726CY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make
Si4726CY
Vishay Siliconix
N-Channel Synchronous MOSFETs with Break-Before-Make
FEATURES
D 4.5- to 20-V Operation
D Driver Impedance—3 W
D Undervoltage Lockout
D Fast Switching Times (30 ns typ.)
D 20-V MOSFETs
D High Side: 0.0135 W @ VDD = 4.5 V
D Low Side: 0.0065 W @ VDD = 4.5 V
D Switching Frequency: 250 kHz to 1 MHz
DESCRIPTION
The Si4726CY n-channel synchronous MOSFET with
break-before-make (BBM) is a high speed driver designed to
operate in high frequency dc-dc switchmode power supplies.
It’s purpose is to simplify the use of n-channel MOSFETs in
high frequency buck regulators. This device is design to be
used with any single output PWM IC or ASIC to produce a
highly efficient low cost synchronous rectifier converter. A
synchronous enable pin (disable = low, enable = high)
controls the synchronous function for light load conditions.
The Si4726CY is packaged in Vishay Siliconix’s high
performance LITTLE FOOTR SO-16 package.
FUNCTIONAL BLOCK DIAGRAM
4.5 V to 20 V
5V
DC-DC
Controller
GND
VDD
Si4726 CBOOT
D1
SYNC EN
MOSFET
Drive Circuitry
with
Break-Before-
Make
IN
GND
Q1
S1
D2
Q2
S2
CBOOT
VOUT
+
GND
Document Number: 71285
S-03075—Rev. C, 03-Feb-03
www.vishay.com
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