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| SI4726CY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make | |||
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Si4726CY
Vishay Siliconix
SPECIFICATIONS
Parameter
Power Supplies
Symbol
Test Conditions Unless Specified
TJ = 25_C
4.5 V < VDD < 5.5 V, 4.5 V < VD1 < 20 V
Min
Limits
Typ
Max
Logic Voltage
Logic Current
Logic Input
VDD
IDD(EN)
IDD(DIS)
VDD = 4.5 V, VIN = 4.5 V
VDD = 4.5 V, VIN = 0 V
4.5
5.5
280
500
220
500
Logic Input Voltage
High
VIH
(VIN)
Low
VIL
Protection
VDD = 4.5 V
3.15
2.3
- 0.3
2.25
0.8
Break-Before-Make Reference
Undervoltage Lockout
Undervoltage Lockout Hysteresis
MOSFET Drivers
VBBM
VUVLO
VH
VDD = 5.5 V
SYNC = 4.5 V
2.4
3.75
4
4.25
0.4
Driver Impedance
MOSFETs
RDR1
Driver 1
3.6
RDR2
VDD = 4.5 V
Driver 2
2
Drain-Source Voltage
VDS
ID = 250 mA
20
Drain-Source On-State Resistancea
rDS(on)1
rDS(on)2
VDD = 4.5 V, ID = 10 A
TJ = 25_C
Q1
Q2
11
13.5
4.6
6.5
Diode Forward Voltagea
VSD1
Q1
VSD2
IS = 2 A, VGS = 0 V
Q2
0.7
1.1
0.7
1.1
Dynamicb (Unless SpecifiedâFs = 250 kHz, dc = 10%. VDD = 5 V, I = 10 A, Refer to Switching Test Setup)
Rise Time
trdr1
Driver 1
10% - 90%
trdr2
Driver 2
35
60
22
40
Fall Time
tfdr1
Driver 1
90% - 10%
tfdr2
Driver 2
10
20
17.5
40
Turn-Off Delay
Dt
td(off)1
td(off)2
Dt1 - 2
Dt2 - 1
See Timing Diagram
VIN to G1
VIN to G2
G1 to G2
G2 to G1
63
130
30
60
17.5
40
38
80
Rise Time
tr
10% - 90%
S1/D2
35
60
Fall Time
tf
90% - 10%
S1/D2
10
20
Source-Drain Reverse Recovery
TimeâQ2
tfr2
IF 2.7 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test: pulse width v300 ms; duty cycle v 2%.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Unit
V
mA
V
V
W
V
mW
V
ns
Document Number: 71285
S-03075âRev. C, 03-Feb-03
www.vishay.com
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