SI4726CY Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make

Si4726CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-to-Source Voltage (Q₁)
100
On-Resistance vs. Gate-to-Source Voltage (Q₂)
80
80
60
I_D = 10 A
40
20
60
I_D = 10 A
40
20
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Output Capacitance vs. Drain Voltage (Q₁)
2500
2000
1500
1000
500
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 10 A
1.2
Q₂
Q₁
1.0
0.8
0.6
0.4
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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6
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Output Capacitance vs. Drain Voltage (Q₂)
6000
5000
4000
3000
2000
1000
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Input V_IH vs. Junction Temperature
2.35
2.30
V_DD = 4.5 V
2.25
2.20
2.15
2.10
2.05
2.00
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 71285
S-03075—Rev. C, 03-Feb-03