SI4505DY-T1 Datasheet, PDF (7/12 Pages) Vishay Siliconix – N- and P-Channel MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.20
10
0.15
T_J = 150 °C
0.10
T_J = 25 °C
0.05
Si4505DY
Vishay Siliconix
I_D = 5 A
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited
10
by R_DS(on)*
1
T_A = 25 °C
Single Pulse
0.1
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 mS
10 mS
100 mS
1S
10 S
DC
Document Number: 71826
S09-0868-Rev. C, 18-May-09
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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